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irf540,irf540 datasheet pdf,irf540 data sheet,Datasheet4UPrevious123456NextIRF540 Datasheet(PDF) - International RectifierHEXFET POWER MOSFET,IRF540 datasheet,IRF540 circuit,IRF540 data sheet IRF,alldatasheet,datasheet,Datasheet search site for Electronic Components and Semiconductors,integrated circuits,diodes,triacs,and other semiconductors. IRF540 Datasheet (PDF) - International Rectifier Part No.IRF540 Download IRF540 Click to view File Power MOSFETIRF540,SiHF540 Vishay Siliconix FEATURES Dynamic dV/dt Rating Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness. This datasheet is subject to change

Power MOSFET

IRF540,SiHF540 Vishay Siliconix FEATURES Dynamic dV/dt Rating Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness. This datasheet is subject to change PD - 91341A IRF540NDescription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,provides the designerN-CHANNEL 100V - 0.055 OHM - 22A TO-220 LOWIRF540 SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed Pulse duration = 300 irf540 pdf irf540 description irf540 datasheets irf540#181;s,duty cycle 1.5 %.()Pulse width limited by safe operating area.Symbol Parameter Test Conditions Min.Typ.Max.Unit td(on) tr Turn-on Delay Time Rise Time VDD = 50 V ID = 12 A RG = 4.7 VGS = 10 V (Resistive Load,Figure 3) 60 45 ns ns Qg Qgs Qgd Total Gate Charge

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