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topologically protected spin diffusion and spin generator

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Unconventional ChargeSpin Conversion in

tronic bands with topologically protected spin textures.[1] After the realization of graphene,topological insulators (TIs),and semimetals with Dirac fermions,Weyl From these devices,we extracted spin parameters (with spin diffusion length 0.82.4 m,spin lifetime topologically protected spin diffusion and spin generator#181; Unconventional ChargeSpin Conversion in WeylSemimetal Unconventional chargetospin conversion in WTe 2 and efficient spin injection into graphene at room temperature.ac) Crystal structure of T d phase bulk WTe 2 with a mirror plane M a (blue dotdash line) and a glide mirror plane M b with the translation of (a+b)/2 in the unit cell.d) Schematic of measurement geometry and colored device picture (the scale bar is 5 topologically protected spin diffusion and spin generator#181;m) for Topologically protected spin diffusion and spin3 layers that have a topologically protected spin diffusion length exceeding 100 mat room temperature.A spin generator is demonstrated by combining magnetic injectors (TbFeCo) with this superlattice.The spin current was found to increase exponentially with the number of superlattice periods.We used this effect to demonstrate a 15-fold

Topologically protected spin diffusion and spin generatorusing chalcogenide superlattices Junji Tominaga 1,Noriyuki Miyata ,Satoshi Sumi2,Hiroyuki Awano2 and Shuichi Murakami3 Spintronicsis expected to be the basis for future ultra-low-energy nanoelectronic devices.To operate such devices at roomTopologically protected spin diffusion and spin generator

Was this helpful?Topologically protected spin diffusion and spin generator layers that have a topologically protected spin diffusion length exceeding 100 ma t room temperature.A spin generator is demonstrated by combining magnetic injectors (TbFeCo) with this Topological insulator-based spin injection into grapheneintegration of spin transport channels with spin injector/generator elements.While with effective spin conserver featuring spin diffusion lengths of up to several topologically protected spin diffusion and spin generator#181;m at room insulators in the bulk but have topologically protected surface states described by the two-dimensional (2D) Dirac Structure and transport of topological insulators on Recent advancements in spintronics have shown that a class of materials,topological insulators (TI),can be used as a spin-current generator or detector.Topological insulators have protected surface states with the electron's spin locked to its momentum.To access these surface states,(Bi,Sb) 2 Te 3 can be grown by molecular beam epitaxy to have the Fermi energy near the Dirac point so

Spin pumping and large field-like torque at room

Apr 01,2020 topologically protected spin diffusion and spin generator#0183;where L is the spin diffusion length in the WTe 2x layer and t WT is the thickness of the WTe 2x layer.Note that the WTe 2x layer is amorphous,which means that its spin diffusion length is much smaller compared to the single crystal spin diffusion length.The spin diffusion length in single crystal WTe 2 is as large as 22 nm at room Shuichi Murakami's research works Tokyo Institute of Shuichi Murakami's 5 research works with 126 citations and 1,175 reads,including Topologically protected spin diffusion and spin generator using chalcogenide superlatticesSatoshi Sumi's research works Toyota Technological Satoshi Sumi's 57 research works with 252 citations and 585 reads,including Topologically protected spin diffusion and spin generator using chalcogenide superlattices

Romain Vasseur UMass Amherst

Topologically protected long edge coherence times in symmetry-broken phases published in PRL Congratulations to Javier on getting a distinguished teaching award! My paper with Sarang Gopalakrishnan on spin diffusion and superdiffusion in XXZ spin chains published in PRL! Utkarshs first paper at UMass on hydrodynamics and anomalous relaxation Review on spintronics Principles and device applications Sep 01,2020 topologically protected spin diffusion and spin generator#0183;Spin polarisation of the injected current is measured to be a few % and the corresponding spin diffusion length in Cu is estimated to be 350 nm at RT.They have further extended their study onto ballistic spin injection by inserting an Al-O tunnelling barrier at the FM/NM interface with increasing the spin signals [66] .Review on spintronics Principles and device applications Sep 01,2020 topologically protected spin diffusion and spin generator#0183;Spin polarisation of the injected current is measured to be a few % and the corresponding spin diffusion length in Cu is estimated to be 350 nm at RT.They have further extended their study onto ballistic spin injection by inserting an Al-O tunnelling barrier at the FM/NM interface with increasing the spin signals [66] .

Recent Advances in Two-Dimensional Spintronics

Dec 09,2020 topologically protected spin diffusion and spin generator#0183;Many improved methods are used to increase spin diffusion length and spin life,and some devices already exhibit long spin diffusion lengths in the micrometer range [13,77,78].For example,graphene epitaxially grown on SiC has high mobility,exhibiting spin transport efficiency up to 75% and spin diffusion length exceeding 100 topologically protected spin diffusion and spin generator#181;m .Recent Advances in Two-Dimensional Spintronics topologically protected spin diffusion and spin generator#0183;The Weyl semimetal WTe 2 and MoTe 2 show great potential in generating large spin currents since they possess topologically protected spinpolarized states and can carry a very large current density.In addition,the intrinsic noncentrosymmetry of WTe 2 and MoTe 2 endows with a unique property of crystal symmetrycontrolled spinorbit torques.An important question to be answered for Recent Advances in Two-Dimensional Spintronics.- Abstract Many improved methods are used to increase spin diffusion length and spin life,and some devices already exhibit long spin diffusion lengths in the micrometer range [13,77,78].For example,graphene epitaxially grown on SiC has high mobility,exhibiting spin transport efficiency up to 75% and spin diffusion length exceeding 100 topologically protected spin diffusion and spin generator#181;m .

Pure spin current devices based on ferromagnetic

Oct 26,2016 topologically protected spin diffusion and spin generator#0183;In addition,the surface states are topologically protected which precludes backscattering and conserves the spin-momentum locking ofProposal for a Topological Plasmon Spin Rectiersystem can serve as a DC spin battery for spintronic devices.The topological insulator (TI) is a class of strongly spin-orbit-coupled materials with topologically-protected,chiral surface states (of opposite group veloc-ity and spin) crossing a bulk electronic gap.[1] In these surface states,spin and momentum are perfectly related,Previous123456NextProposal for a topological plasmon spin rectierD is the spin diffusion coefcient and s is the spin relax-ation time.As shown in Fig.2,zero spin-current is main-tained at the boundaries of the one-dimensional lattice both by the explicit form of this drift velocity function v 0,t =v L,t =0 but also by mirroring the spin density across the boundary to eliminate spin diffusion.Spin

Phys.Rev.B 97,081106(R) (2018) - Bulk and edge spin

We investigate the spin transport properties of a topological magnon insulator,a magnetic insulator characterized by topologically nontrivial bulk magnon bands and protected magnon edge modes located in the bulk band gaps.Employing the Landau-Lifshitz-Gilbert phenomenology,we calculate the spin current driven through a normal $\mathrm{metal}|\mathrm{topological}$ magnonNanoelectronics with proximitized materials - ScienceDirectMay 01,2019 topologically protected spin diffusion and spin generator#0183;For x topologically protected spin diffusion and spin generatorgt; 0,there is no net charge current density,j + j,but as a result of spin diffusion and M,only pure spin current,j j,flows.Adapted from Ref.[3] .In a lateral device similar to that from Fig.5 ,with 3 F contacts were made of Co,separated by a tunnel barrier MgO from graphene sheet as the N region,spin logic Magnetotransport in Bi2Se3 thin films epitaxially grownTopological insulators (TIs) like Bi 2 Se 3 are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport.In this work,we achieved the epitaxial growth of Bi 2 Se 3 thin films on germanium,which is a key material for microelectronics.Germanium also exhibits interesting properties with respect to

Magnetotransport in Bi2Se3 thin films epitaxially grown

Topological insulators (TIs) like Bi 2 Se 3 are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport.In this work,we achieved the epitaxial growth of Bi 2 Se 3 thin films on germanium,which is a key material for microelectronics.Germanium also exhibits interesting properties with respect to Magnetotransport in Bi topologically protected spin diffusion and spin generatorlt;SUB topologically protected spin diffusion and spin generatorgt;2 topologically protected spin diffusion and spin generatorlt;/SUB topologically protected spin diffusion and spin generatorgt;Se topologically protected spin diffusion and spin generatorlt;SUB topologically protected spin diffusion and spin generatorgt;3 topologically protected spin diffusion and spin generatorlt;/SUB topologically protected spin diffusion and spin generatorgt;Abstract.Topological insulators (TIs) like Bi 2 Se 3 are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport.In this work,we achieved the epitaxial growth of Bi 2 Se 3 thin films on germanium,which is a key material for microelectronics.Germanium also exhibits interesting properties with Magnetic Properties of Large-Scale Nanostructured Graphene Unlike the conventional spin Hall effect,this feature is obtained without spin-orbit interactions or topologically protected transport channels.Motivated by spin Hall effect measurements,we calculate transverse resistance signals in zz-TGA devices and show that these can provide a general diagnostic tool to detect the presence of zigzag edge

Large spin to charge conversion in topological

Large spin to charge conversion in topological superconductor . and topologically protected gapless boundary states that can support exotic Majorana fermions [9,10].These unique properties make From the spin pumping measurements we derive aspin diffusionHiroyuki AWANO Toyota Technological Institute,Nagoya The spin Hall angle of Co68Tb32 is 3.5 times larger than that of Co,and mainly originates from View Topologically protected spin diffusion and spin generator using chalcogenide superlatticesEnhanced spin Seebeck effect signal due to spinThe spin-Seebeck effect refers to voltage signals induced in metals by thermally driven spin currents in adjacent magnetic systems.We present a theory of the spin-Seebeck signal in the case where the conductor that supports the voltage signal is the topologically protected two-dimensional surface-state system at the interface between a ferromagnetic insulator (FI) and a topological insulator

Energy Landscape of 3D Spin Hamiltonians with

Energy Landscape of 3D Spin Hamiltonians with Topological Order Sergey Bravyi1 and Jeongwan Haah2 1IBM Watson Research Center,Yorktown Heights,New York 10598,USA 2Institute for Quantum Information,California Institute of Technology,Pasadena,California 91125,USA (Received 6 June 2011; published 6 October 2011) We explore the feasibility of a quantum self-correcting memory based onEnergy Landscape of 3D Spin Hamiltonians withEnergy Landscape of 3D Spin Hamiltonians with Topological Order Sergey Bravyi1 and Jeongwan Haah2 1IBM Watson Research Center,Yorktown Heights,New York 10598,USA 2Institute for Quantum Information,California Institute of Technology,Pasadena,California 91125,USA (Received 6 June 2011; published 6 October 2011) We explore the feasibility of a quantum self-correcting memory based on12345NextCurrent-induced spin polarization in topologicalcomprises paramagnetic conductors with strong SO coupling,which imparts spin-generator capability.Promising candidates are three-dimensional (3D) topological insulators (TIs),which behave as insulators in the bulk but have topologically protected surface states described by the two-dimensional (2D) Dirac equation13.In general,3D TIs lack

(PDF) Spin conduction in anisotropic three-dimensional

This voltage is present even when the separation between the contacts is larger than the spin diffusion length. We establish the presence of topologically protected edge states on the (001

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